SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF TO FORM HIGH QUALITY SILICON GERMANIUM THIN FILM WITH NO VOID ON GATE INSULATION LAYER

摘要

PURPOSE: A semiconductor device is provided to form a high quality silicon germanium thin film with no void on a gate insulation layer by forming a thinner silicon germanium layer as a gate electrode. CONSTITUTION: A seed silicon layer(8) is formed on a gate insulation layer. A silicon germanium thin film(10) is formed on the seed silicon layer, having a thickness of 50 nanometers or lower. A cap silicon thin film(12) is formed on the silicon germanium thin film, having a thickness of 0.5-5 nanometers. The cap silicon thin film decreases the surface energy of the silicon germanium thin film.