SILICON SOLAR CELL FORMED BY SEPARATING N TYPE LAYER FROM P-N TYPE JUNCTION OF WAFER USING HOLLOW CATHODE PLASMA AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A silicon solar cell and a manufacturing method thereof are provided to improve reproductivity and productivity by separating simultaneously n type layers from p-n junctions of wafers using uniform plasma of high density. CONSTITUTION: A p type silicon substrate is regularly sawn and contaminants are removed therefrom. A texture for reducing surface-reflectivity is formed on the substrate by using etching. The substrate is cleaned by using deionized water and dried. A solar cell wafer is formed by forming an n type layer on the substrate. At this time, a PSG(Phosphorus Silicate Glass) layer is formed thereon. The PSG layer is removed therefrom and the n type layer is separated from a p-n junction of the substrate by using an electrode separating apparatus under a predetermined gas atmosphere. The predetermined gas is formed by mixing SF6 with O2.