MRAM AND DATA READ METHOD THEREOF, ESPECIALLY SETTING ELECTRIC POTENTIAL OF UNSELECTED NEGATIVE BIT LINES EQUAL TO MAIN BIT LINE

摘要

PURPOSE: A MRAM(Magnetic Random Access Memory) and a data read method thereof are provided to achieve a high speed access to achieve large capacity and large integration by using cross-point memory cells. CONSTITUTION: Cross point type memory cells(MC11 - MC48) formed with MTJ devices are arranged in a plurality of memory cell blocks. Memory cells in the first memory cell block are connected to negative bit lines(SBL1,SBL3,SBL5,SBL7) respectively. Memory cells in the second memory cell block are connected to negative bit lines(SBL2,SBL4,SBL6,SBL8) respectively. The negative bit lines are connected to main bit lines(MBL1 - MBL4) through current path of selection MOS transistors(Q1 - Q8).