PMOS DEVICE WITH BF2 AND B11 ION-IMPLANTED REGION AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A PMOS(P channel Metal Oxide Semiconductor) device and a manufacturing method thereof are provided to prevent the degradation of a short channel margin and to reduce contact resistance by forming locally a BF2 and B11 ion-implanted region in BF2 ion-implanted source/drain regions. CONSTITUTION: A gate electrode(14) is formed on a semiconductor substrate(10). An insulating spacer(16) is formed at both sidewalls of the gate electrode. BF2 ion-implanted source and drain regions(18) are formed in the substrate to align the gate electrode. A BF2 and B11 ion-implanted region(22) is locally formed in the source and drain regions, respectively. An insulating layer(20) with a source/drain contact hole(21) is formed thereon.