首页> 外国专利> HIGH-DENSITY PLASMA OXIDE LAYER DEPOSITION APPARATUS HAVING TWO OR MORE SEPARABLE CHUCKS FOR EXCLUDING INFLUENCE OF ELECTRIC POTENTIAL AND FORMING UNIFORMLY DENSITY DISTRIBUTION OF PLASMA IONS

HIGH-DENSITY PLASMA OXIDE LAYER DEPOSITION APPARATUS HAVING TWO OR MORE SEPARABLE CHUCKS FOR EXCLUDING INFLUENCE OF ELECTRIC POTENTIAL AND FORMING UNIFORMLY DENSITY DISTRIBUTION OF PLASMA IONS

机译:具有两个或更多个可分离的卡盘的高密度等离子体氧化层沉积装置,可排除电势的影响并形成等离子体的均匀密度分布

摘要

Purpose: a high density plasma oxide layer precipitation equipment, it is in addition to an influence of electric potential and to be formed uniformly the Density Distributions of plasma ions with two or more separable collets, it is arranged to exclude processing defect due to gap by forming an oxide layer, there is the uniform thickness in semi-conductive substrate and prevent from generating gap within a bar ditch in the method for being used to form an oxide layer. Construction: a high density plasma oxide layer precipitation equipment includes collet (160,170), and a thermal insulation material (150) is used to protect collet, and is connected to a lower electrode (180,190) for collet. Collet is divided into two more collets. Lower electrode is connected to the collet of each division. The collet of each division is divided into thermal insulation material. Same power is applied to the collet of each division.
机译:目的:一种高密度等离子体氧化层沉淀设备,它除了受电势的影响,而且具有两个或多个可分离夹头的等离子体离子的密度分布均匀地形成外,还可以消除由于间隙引起的加工缺陷。在形成氧化物层的方法中,在半导体衬底中具有均匀的厚度,并防止在条沟内产生间隙。结构:高密度等离子体氧化层沉淀设备包括筒夹(160,170),绝热材料(150)用于保护筒夹,并与筒夹的下部电极(180,190)连接。夹头又分为两个夹头。下电极连接到每个分区的夹头。每个分区的夹头分为隔热材料。每个部分的夹头均施加相同的力。

著录项

  • 公开/公告号KR20040103569A

    专利类型

  • 公开/公告日2004-12-09

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030034518

  • 发明设计人 KIM MIN;

    申请日2003-05-29

  • 分类号H01L21/205;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:25

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