METHOD FOR CRYSTALLIZING SILICON USING LASERS OF VARIOUS ENERGY LEVELS AT ONCE

摘要

The present invention relates to a kind of method for crystallizing silicon, use: (the lateral solidification SLS of sequence) method of the invention is that sequence side crystallization is lower, and more specifically, there are internal flaws, such as crystal grain in the method for silicon metal. ;The present invention is a kind of driving laser mask sequential lateral crystallization (SLS) method, by the way that laser beam portion is transmitted to second piece of diffraction reduction energy density to form multiple narr, so that silicon (N+1) is crystallized blocking (N+1). Realizing high energy laser and low energy laser using laser processing, time moves on. ;Furthermore, it is possible to the defect be handled by activating the crystallization layer defects caused by high laser energy simultaneously under low laser energy, so as to form the polysilicon of high quality, without reducing process yield.