METHOD FOR FABRICATING PHOTOMASK CAPABLE OF CORRECTING CD TO IMPROVE PRECISION OF MEASURING CD OF ULTIMATE PHOTOMASK PATTERN

摘要

Purpose: a kind of method is arranged to improve the precision of the measurement CD of a last photomask pattern for manufacturing the photomask that one can correct CD (critical dimension) by correcting the CD of a resist pattern after exposure, and development process is performed on the protection layer. Construction: a mask layer and protective layer are sequentially formed in the front surface of an optical transport substrate (S100). Exposed and development process is performed on the protection layer to measure the CD of a resist pattern (S102, S104). Whether a measurement result of the CD of resist pattern, which is fallen in a term of reference, is determined (S106). If CD measurement results exceed term of reference, the CD of resist pattern gradually or is decrescence corrected (S108). Mask layer carries out one etch process of patterning, uses resist pattern (S110). Resist pattern is eliminated (S112). The CD of mask layer model is measured (S114).