METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH TRENCH TYPE ISOLATION LAYER CAPABLE OF REMOVING RESIDUAL LAYER OF GATE MATERIAL IN MOAT BY FILLING MOAT USING INSULATING LAYER

摘要

Purpose: a kind of method is used to remove the residual layer of the grid material in moat for manufacturing the semiconductor device with a trench type separation layer by being arranged to prevent bridge between gate electrode filling an insulating layer in moat. Construction: a bar ditch (22) are formed in semi-conductive substrate (21). One separation layer (23) is formed by filling a first insulating layer in ditch, and wherein moat results from the top corner of ditch. Second insulating layer is formed in composite structure. By the blanket etch of second insulating layer according to the surface of substrate using an etching target, an insulating layer (25a) is filled in moat. Then, a gate insulating layer (26) and a polysilicon layer (27) are sequentially formed on substrate. By etching polysilicon layer, a gate electrode is formed.