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METHOD FOR CONTROLLING THE DELAY TIME IN SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY CONTROLLING THE AMOUNT OF DELAY ARBITRARILY
METHOD FOR CONTROLLING THE DELAY TIME IN SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY CONTROLLING THE AMOUNT OF DELAY ARBITRARILY
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机译:控制半导体存储器中的延迟时间的方法,特别是任意地控制延迟量
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摘要
PURPOSE: A method for controlling the delay time in a semiconductor memory device regardless of delay circuit is provided to control the delay time by controlling a falling point of a pulse signal for a test mode. CONSTITUTION: A method for controlling the delay time in a semiconductor memory device comprises the steps of: applying a test mode pulse signal(a); generating N test mode select signals (N is a numeral) which are synchronizing and responding to every falling edge of the test mode pulse signal according to the order(b); regenerating (N-1)th test mode select signal in order after generating Nth test mode select signal(c); repeating the (d) and (c) steps. Wherein, the input signal is delayed when the first to (N-1)th test mode select signals are enabled. And the delay time is controlled by controlling the pulse width of the Nth and (N-1)th test mode select signal through controlling the falling point of the test mode pulse signal.
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