METHOD OF MANUFACTURING FLASH CELL FOR PREVENTING GENERATION OF DEFECTS IN POSTPROCESS BY USING NITRIDE-LAYER HARD MASK TO REMOVE ONO FROM SIDEWALL

摘要

PURPOSE: A method of manufacturing a flash cell is provided to prevent generation of defects in a postprocess by using a nitride-layer hard mask to remove an ONO from a sidewall. CONSTITUTION: A floating gate(20) is formed on a semiconductor substrate(10). An ONO(30) is deposited thereon. A nitride layer is deposited thereon. A photoresist is masked only on a cell area. A nitride hard mask is formed by etching the nitride layer of a logic area. The ONO of the logic area and the floating gate of the logic area are exposed by the nitride head mask. The ONO of the logic area and the floating gate of the logic area are removed therefrom.