METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO COMPENSATE FOR DAMAGE TO SEMICONDUCTOR SUBSTRATE IN ION IMPLANTATION PROCESS AND AVOID DISLOCATION OF IMPLANTED IONS

• 1. 离子注入掩模及其制造方法,使用离子注入掩模的碳化硅半导体器件及其制造方法 [P] . 中国专利： CN1909191A . 2007-02-07
• 2. 离子注入掩模形成用分散体、离子注入掩模的形成方法以及半导体器件制造方法 [P] . 中国专利： CN108701595A . 2018-10-23
• 3. SEMICONDUCTOR DEVICE WITH GATE INSULATION LAYERS OF DIFFERENT THICKNESSES BY NITROGEN ION IMPLANTATION PROCESS AND FABRICATING METHOD THEREOF TO PREVENT SEMICONDUCTOR SUBSTRATE FROM BEING DAMAGED BY PLURAL PHOTOLITHOGRAPHY PROCESSES [P] . 韩国专利： KR20050010220A . 2005-01-27

  机译： 氮离子注入法不同厚度门控绝缘层的半导体器件及其制备方法，以防止被多次光电子照相法损坏

• 4. METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO MAXIMUMLY CONTROL ION IMPLANTATION DAMAGE TO LOWER STRUCTURE OR SEMICONDUCTOR SUBSTRATE [P] . 韩国专利： KR20050022392A . 2005-03-08

  机译： 制造半导体器件以最大程度地控制离子注入损伤以降低结构或半导体基质的方法

• 5. Method for fabricating a semiconductor device by high energy ion implantation while minimizing damage within the semiconductor substrate [P] . 美国专利： US5436176A . 1995-07-25

  机译： 通过高能离子注入制造半导体器件同时最小化半导体衬底内的损伤的方法

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