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SEMICONDUCTOR DEVICE WITH GATE INSULATION LAYERS OF DIFFERENT THICKNESSES BY NITROGEN ION IMPLANTATION PROCESS AND FABRICATING METHOD THEREOF TO PREVENT SEMICONDUCTOR SUBSTRATE FROM BEING DAMAGED BY PLURAL PHOTOLITHOGRAPHY PROCESSES
SEMICONDUCTOR DEVICE WITH GATE INSULATION LAYERS OF DIFFERENT THICKNESSES BY NITROGEN ION IMPLANTATION PROCESS AND FABRICATING METHOD THEREOF TO PREVENT SEMICONDUCTOR SUBSTRATE FROM BEING DAMAGED BY PLURAL PHOTOLITHOGRAPHY PROCESSES