APPARATUS FOR MEASURING ION DOSE OF WAFER KEEPING CONSTANT ION DOSE BY PLACING SPECIMEN WITHIN APPARATUS

摘要

Purpose: a device of the measuring ion dosage for a chip is arranged to keep an ion dose, is equably implanted to a chip by placing a standard sample within device. Construction: the chip (W) for completing ion implanting is placed on a stage (130) for the first oxidation film with forming. The side of chip is arranged in one standard sample (170), and the second oxidation film is formed in standard sample. The laser beam issued from a laser source is applied to standard sample and respectively to chip. First intensity of the laser beam reflected from chip and the second intensity of the laser beam reflected from standard sample are detected by a detection unit. The thickness of first oxidation film and the ion dose for being implanted to chip are measured with a processor, according to the thickness of the first oxidation film measured, are measured ion dose and are compensated.