METHOD FOR FABRICATING PSM BY CRYSTAL ETCH METHOD TO OVERCOME TEST PROBLEM OCCURRING IN FABRICATING MASK AND EMBODY MASSPRODUCTION MASK

摘要

PURPOSE: A method for fabricating a PSM(phase shift mask) by a crystal etch method is provided to overcome a test problem occurring in fabricating a mask and embody a massproduction mask by correcting a difference of a CD(critical dimension) with respect to an isolated pattern or a duty pattern in a peri/core part while using a binary mask or a half-tone PSM. CONSTITUTION: A substrate made of crystal is prepared as a base(100). The base is etched to form an assistant pattern(104). A main pattern(102) is formed on the base having the assistant pattern. The size of a zero-degree pattern part is controlled to be a size that cannot be printed in a wafer.