METHOD FOR FORMING INDUCTOR OF SEMICONDUCTOR DEVICE TO DECREASE NUMBER OF PROCESSES AND ELIMINATE POSSIBILITY OF DEFECT OCCURRING IN ELECTROPLATING PROCESS

摘要

PURPOSE: A method for forming an inductor of a semiconductor device is provided to decrease the number of processes and eliminate the possibility of a defect occurring in an electroplating process by filling copper by a spin-on force fill method using nano copper particles or a copper precursor. CONSTITUTION: After the first photoresist layer is formed on a semiconductor substrate(21) having a predetermined structure, the first photoresist layer is patterned to expose a predetermined region of the substrate. After copper is deposited by a spin-on method using a solution containing nano copper particles, a baking process and an annealing process are performed to form the first copper layer(23) in the patterned first photoresist layer. The second photoresist layer is formed on the resultant structure and is patterned to expose a part of the first photoresist layer and the first copper layer. After copper is deposited by a spin-on method using the solution containing nano copper particles, a baking process and an annealing process are performed to form the second copper layer(25) between the patterned second photoresist layers. The first and second photoresist layers are eliminated.