METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE TO IMPROVE RELIABILITY OF FABRICATING PROCESS AND ELECTRICAL CHARACTERISTIC OF SEMICONDUCTOR DEVICE

摘要

A kind of purpose: method, the separation layer for being used to form semiconductor device is arranged to improve the reliability an of fabricating process and an electrical characteristics of semiconductor device, by preventing a moat from being formed at the edge for removing the separation layer in a pad oxide layer or the clean method of a technique. Construction: the stack structure with an isolated area opened is formed in semi-conductive substrate (201), is made of a pad oxide layer and a pad nitride layer. One bar ditch (204) are formed in the isolated area of semiconductor substrate. One insulation material layer is formed in composite structure to fill ditch. On the way nitride layer, white layer is moved to one separation layer of form (205) on ditch is in isolated area to insulation material layer. Pad nitride layer is eliminated. One nitride layer, white layer is formed in composite structure. Nitride layer, white layer is etched away to only be retained on the side wall of separation layer, so that a nitride layer, white layer gasket is formed. Pad oxide layer is eliminated.