CMP METHOD USING GRAINLESS SLURRY FOR PREVENTING SCRATCHES OF A PREDETERMINED LAYER BY USING A GRAINLESS SLURRY

摘要

Purpose: a kind of CMP (chemical mechanical polishing) methods are arranged to improve contact resistance and via resistance by using an agranular thin pulp. Construction: a layer insulation (33) is formed in semi-conductive substrate, has a metal wire (31). One contact hole (35) is formed in layer insulation for making the external face of metal line exposing. A tungsten film for being completely filled with contact hole is formed on it. One tungsten bolt (37a) is formed by executing CMP on tungsten film using an agranular thin pulp and an oxidant.