ULTRA LARGE SCALE INTEGRATION SEMICONDUCTOR DEVICE FORMED ON SOI AND FABRICATING METHOD THEREOF TO DROP OPERATIONAL VOLTAGE APPLIED TO DRAIN

摘要

PURPOSE: An ultra large scale integration semiconductor device formed on an SOI and a fabricating method thereof are provided to drop an operational voltage applied to a drain by reducing the amount of NM ions in an ion implantation process. CONSTITUTION: A gate oxide layer(115) is formed on an active region. A gate poly(108) is formed on the gate oxide layer. A first lightly-doped drain spacer(140) is formed on a lateral part of the gate oxide layer and the gate poly on the active region. A second lightly-doped drain spacer(142) is formed on the first lightly-doped drain spacer. A salicide layer(130) is formed on a peripheral part of the active region and on the gate poly. A plurality of metal connections(132,134,136) are formed on the salicide layer.