VARACTOR WITH P++ TYPE REGION FOR ENLARGING WIDTH OF DEPLETION LAYER IN REVERSE BIAS STATE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A varactor and a manufacturing method thereof are provided to minimize the variations of frequency and capacitance due to a tuning voltage of the varactor by enlarging the width of a depletion layer in a reverse bias state using a P++ type region. CONSTITUTION: A varactor includes an N++ type semiconductor substrate(110), an N- type epitaxial layer(120) on the substrate, a P+ type region(130) in the epitaxial layer, a P++ type anode region(140) with a relatively large width compared to the P+ type region in the epitaxial layer, and an N+ type cathode region(150) in the P+ type region. The P++ anode region has a relatively small depth compared to the P+ type region. The N+ type cathode region has a relatively large depth compared to the P+ type region.