METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO GUARANTEE RELIABILITY OF ELECTROMIGRATION AND STRESS MIGRATION OF COPPER INTERCONNECTION

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to guarantee reliability of electromigration and stress migration of a copper interconnection by improving an etch profile of a dual damascene pattern. CONSTITUTION: A multilayered insulation layer for a dual damascene pattern is deposited on a semiconductor substrate(10) having a lower metal interconnection. A via hole(33) is formed in the multilayered insulation layer. A photoresist layer is left only in the via hole. A trench(139) is formed in the multilayered insulation layer. After the photoresist layer in the via hole is removed, the lower metal interconnection is exposed. An upper metal interconnection is formed in the via hole and the trench to be electrically connected to the lower metal interconnection. While the upper surface of the photoresist layer remaining in the via hole is lower than the bottom surface of the trench, the trench is formed so that an etch profile of a round type is formed in the bottom surface of the trench adjacent to the via hole.