METHOD FOR FABRICATING HIGH-QUALITY POLYCRYSTALLINE SILICON THIN FILM TO IMPROVE CRYSTALLIZATION QUALITY

摘要

PURPOSE: A method for fabricating a high-quality polycrystalline silicon thin film is provided to improve a crystallization quality by reducing a crystal defect of a polycrystalline silicon thin film formed by an SLS(sequential lateral solidification) method for crystallizing an amorphous silicon thin film by exmier laser. CONSTITUTION: A semiconductor or a metal thin film is deposited on a substrate(31). The semiconductor or the metal thin film is patterned by a predetermined etch process. The semiconductor or the metal thin film that is patterned by irradiating laser is crystallized.