首页> 外国专利> STRUCTURE CONTROL TECHNOLOGY OF COATING LAYER AND INTERFACE FOR IMPROVING DURABILITY OF NEXT GENERATION MULTILAYER COATED TOOLS FOR ULTRA-HIGH SPEED CUTTING

STRUCTURE CONTROL TECHNOLOGY OF COATING LAYER AND INTERFACE FOR IMPROVING DURABILITY OF NEXT GENERATION MULTILAYER COATED TOOLS FOR ULTRA-HIGH SPEED CUTTING

机译:提高下一代超高速切削多层涂层刀具耐用性的涂层层和界面的结构控制技术

摘要

Purpose: in order to understand the process of arc ion plating and structure and the experimental condition of feature the research life and abrasion shape that pass through the tool of X-ray analysis and coating of TiN film, it enables high-speed cutting by TiN, TiAlN, TiC and the covering film of aluminium oxide, wear-resisting film, on cutting tool, to improve the friction characteristics of abrasion and cutting tool. Construction: the durability characteristics that the structure control technique and interface of coating are used to improve the superfast next-generation multilayer coat tool for cutting are, this is the best coating process of a CrN coating, when the 0. of a diffraction angle of analysed film after 20 to 80 degree coat a film on a matrixWhen 5 stepsize, when a bias voltage increases, wherein the CrN of surface (111), (200) and (220) preferably grows up; When voltage increases, the growth of CrN is main; When bias voltage is low, a broad peak of amorphous phase is shown, but when bias voltage is high, the crystalline phase at peak is shown, is low when bias voltage increase from bias voltage is worked as, when one peak is shown, since a broad peak is shown; The crystal structure of Cr2N is hexagonal, and the crystal structure of CrN is cube; When bias voltage increases, coating is changed to the unbodied of crystallization, and the direction of CrN coatings is paid the utmost attention on (111) and (200) surface.
机译:目的:为了了解通过X射线分析和TiN膜的涂层工具进行的电弧离子镀覆的过程和结构以及具有研究寿命和磨损形状的特征的实验条件,可以进行TiN的高速切割,TiAlN,TiC和氧化铝的覆盖膜,耐磨膜,在切削刀具上,以改善磨损和切削刀具的摩擦特性。构造:涂层的结构控制技术和界面可用于改进超快切削的下一代多层涂层工具的耐用性,这是CrN涂层的最佳涂层工艺,当衍射角为0。 20〜80度后,在基体上成膜后的被分析膜。5阶段化时,随着偏置电压的增加,表面(111),(200),(220)的CrN优选成长。当电压增加时,CrN的生长是主要的。当偏置电压低时,示出了非晶相的宽峰,但是当偏置电压高时,当从偏置电压起偏置电压增加时,峰值处的结晶相就低,当示出一个峰值时,由于显示了一个宽峰; Cr2N的晶体结构为六方晶,CrN的晶体结构为立方晶。当偏置电压增加时,涂层会变成无结晶状态,因此(111)和(200)表面应特别注意CrN涂层的方向。

著录项

  • 公开/公告号KR20050022763A

    专利类型

  • 公开/公告日2005-03-08

    原文格式PDF

  • 申请/专利权人 CHANGWON NATIONAL UNIVERSITY;

    申请/专利号KR20030060463

  • 发明设计人 SHIN KEE SAM;

    申请日2003-08-27

  • 分类号C23C14/32;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:44

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