The method of correcting the alignment of the exposure apparatus is disclosed. First, the alignment as the die and adjacent the outer edge region by using a mask with an outer vernier and inner vernier for alignment of the lithography process to form a pattern on a substrate, wherein the outer vernier and inner vernier pattern state to each of for the overlay is measured. At this time, the values measured for the overlay Magx * X - Rotx * Y (wherein, Mag is a field Magnificent pikae Orientation is, Rot the field rotation, X, Y is the measurement position, x represents any field) represented by. Then, as the feedback of the measurement value of the correction to the alignment of the exposure apparatus used in the lithography.
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