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METHOD FOR FABRICATING TRIODE CARBON NANOTUBE FIELD EMISSION DEVICE HAVING SELF-ALIGNED GATE-EMITTER STRUCTURE

机译:具有自对准门-发射极结构的三碳纳米管场发射器件的制造方法

摘要

To the present invention, the cathode side of a transparent substrate a transparent conductive cathode metal film on the oxide film on the deposition of a gate insulating film and a gate metal film is continuous and with one of the gate hole mask, a gate metal layer, a gate insulating film, and a cathode sequentially sequentially etching a metal film self-aligned to form a cathode transparent to conduct other than forming the through holes with respect to the rest of the films film, and only matches the center of the CNT emitters exactly the gate hole center in the gate hole by the back exposure by applying the photosensitive CNT paste (self-align ) but by proposing a method that simplifies the process CNT emitter and a new field emission device that can gate hole essentially prevent the misalignment problem and propose a method, also, a method of a display device and a surface light source made using the the proposed device.
机译:对于本发明,透明衬底的阴极侧,在透明氧化膜上的透明导电阴极金属膜上的氧化膜上沉积有栅极绝缘膜和栅极金属膜是连续的,并且与栅极孔掩模,栅极金属层之一,栅极绝缘膜和阴极依次蚀刻自对准的金属膜以形成透明的阴极,以进行导电,而不是相对于其余膜形成通孔,并且仅与CNT发射极的中心匹配通过使用光敏性CNT糊剂(自对准)进行背曝光,可以精确地将栅极孔的中心对准栅极孔,但是通过提出一种简化工艺的CNT发射器的方法和一种可以使栅极孔基本上消除了未对准问题的新型场致发射装置并且提出一种方法,以及一种显示装置的方法和使用该提出的装置制成的面光源。

著录项

  • 公开/公告号KR20050042380A

    专利类型

  • 公开/公告日2005-05-09

    原文格式PDF

  • 申请/专利权人 KWON SANG JIK;

    申请/专利号KR20030077305

  • 发明设计人 KWON SANG JIK;

    申请日2003-11-03

  • 分类号H01J1/30;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:24

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