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METHOD FOR FABRICATING TRIODE CARBON NANOTUBE FIELD EMISSION DEVICE HAVING SELF-ALIGNED GATE-EMITTER STRUCTURE
METHOD FOR FABRICATING TRIODE CARBON NANOTUBE FIELD EMISSION DEVICE HAVING SELF-ALIGNED GATE-EMITTER STRUCTURE
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机译:具有自对准门-发射极结构的三碳纳米管场发射器件的制造方法
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摘要
The present invention, the cathode-side transparent conductive film on the transparent cathode metal oxide film on the substrate, a gate insulating film and the gate depositing a metal film in a row and form a gate metal layer using the gate hole mask, a gate insulating film, and a cathode sequentially etching the through-holes with respect to the rest of the films except for the cathode and the transparent conductive film and a metal film continuously, the back by applying a photosensitive CNT paste by proposing a self-assembly (self-align) only in the way the center of the gate hole through the exposure of the CNT emitter and a gate hole formed so that it exactly matches the center, simplifying the process, while essentially preventing the CNT emitter and a gate hole misalignment problem propose a new method for producing a field emission device that can be, and further, by using this method, we propose to manufacture the display device and the surface light source device.
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