首页> 外国专利> METHOD FOR FABRICATING TRIODE CARBON NANOTUBE FIELD EMISSION DEVICE HAVING SELF-ALIGNED GATE-EMITTER STRUCTURE

METHOD FOR FABRICATING TRIODE CARBON NANOTUBE FIELD EMISSION DEVICE HAVING SELF-ALIGNED GATE-EMITTER STRUCTURE

机译:具有自对准门-发射极结构的三碳纳米管场发射器件的制造方法

摘要

The present invention, the cathode-side transparent conductive film on the transparent cathode metal oxide film on the substrate, a gate insulating film and the gate depositing a metal film in a row and form a gate metal layer using the gate hole mask, a gate insulating film, and a cathode sequentially etching the through-holes with respect to the rest of the films except for the cathode and the transparent conductive film and a metal film continuously, the back by applying a photosensitive CNT paste by proposing a self-assembly (self-align) only in the way the center of the gate hole through the exposure of the CNT emitter and a gate hole formed so that it exactly matches the center, simplifying the process, while essentially preventing the CNT emitter and a gate hole misalignment problem propose a new method for producing a field emission device that can be, and further, by using this method, we propose to manufacture the display device and the surface light source device.
机译:本发明是,在基板上的透明阴极金属氧化物膜上的阴极侧透明导电膜,栅极绝缘膜和将栅极金属膜连续沉积并使用栅极孔掩模,栅极形成栅极金属层的栅极绝缘膜和阴极依次对除阴极和透明导电膜和金属膜以外的其余膜依次蚀刻通孔,并通过提出自组装方法通过施加光敏CNT糊剂背面进行蚀刻自对准),仅通过通过CNT发射极的暴露而形成的栅孔的中心和形成的栅孔使其完全匹配中心的方式简化了工艺,同时基本上防止了CNT发射体和栅孔的未对准问题提出了一种制造场致发射器件的新方法,并且可以通过使用该方法来制造显示器件和面光源器件。

著录项

  • 公开/公告号KR100558078B1

    专利类型

  • 公开/公告日2006-03-07

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20030077305

  • 发明设计人 권상직;

    申请日2003-11-03

  • 分类号H01J1/30;

  • 国家 KR

  • 入库时间 2022-08-21 21:24:12

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