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PHOTORESIST COMPOSITION FOR EUV AND METHOD FOR FORMING PHOTORESIST PATTERN USING THE SAME
PHOTORESIST COMPOSITION FOR EUV AND METHOD FOR FORMING PHOTORESIST PATTERN USING THE SAME
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机译:用于EUV的光致抗蚀剂组合物和使用该光致抗蚀剂组合物形成光致抗蚀剂图案的方法
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摘要
The present invention relates to photoresist compositions for EUV and methods for forming photoresist patterns. More specifically, fine photoresist patterns: of less than 50 nm without collapse are formed with EUV (Extreme Ultraviolet) as an exposure light source by using a negative photoresist composition comprising a melamine derivative and polyvinylphenol.
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