ETCHING SOLUTION TO IMPROVE ETCH RATE FOR COPPER MOLYBDENUM MULTILAYERS AND ETCHING METHOD USING THE SAME

摘要

PURPOSE: Provided are an etching solution for improving etch rate of a copper molybdenum membrane, which controls etch rate easily, is excellent in taper profile and linearity of patterns, and shows a small loss of critical dimension(CD), and an etching method thereof. CONSTITUTION: The etching solution contains 5-15wt%(based on the total weight of the whole composition) of hydrogen peroxide, 1-5wt% of an organic acid, 0.5-5wt% of a sulfuric acid salt, 0.2-5wt% of a cyclic amine compound, and the balance(based on the total weight of the whole composition being 100wt%) being deionized water. And the etching method contains the steps of: depositing the copper molybdenum membrane on a substrate(10); leaving a photoresist(16) selectively on the copper molybdenum membrane; etching the copper molybdenum membrane with the etching solution. The copper molybdenum membrane is a double membrane forming a copper membrane(14) on a molybdenum membrane(12).