Silicon grid structure in apparatus for curing using electron beam and apparatus for curing using electron beam including silicon grid

摘要

PURPOSE: An anode grid structure in an apparatus for curing using electron beam is provided to reduce particles and to enhance lifetime of the apparatus by using a silicon grid as the anode grid. CONSTITUTION: An apparatus for curing using electron beam comprises a chamber for loading a semiconductor wafer, a cathode for applying high voltage, and an anode grid for applying low voltage. In the apparatus, DC plasma for curing is generated by applying high voltage to the cathode and applying low voltage to the anode grid. At this time, a silicon grid(35) is used as the anode grid. A plurality of holes(35a) is formed in the silicon grid.