Methods for forecasting structure loss rate of silicon crystal ingot, for manufacturing silicon crystal ingot growing funace, and for growing silicon crystal ingot at the furnace

摘要

The invention of argon (Ar) gas is injected therein to the growth of, more particularly, silicon single crystal ingot relates to a method of manufacturing method of a structure loss prediction method of the silicon single crystal ingot, the silicon single crystal ingot is grown and the silicon single crystal ingot by him by identifying the relationship between the maximum flow rate and structure loss rate of the silicon single crystal ingot it relates to Consequently method for increasing the yield of the silicon single crystal ingot on the basis thereof.; Technical features of the present invention to achieve this structure, the loss rate of the silicon single crystal ingot which is proportional to the maximum flow rate by calculating the maximum flow rate of the argon gas flowing in the interior of a silicon single crystal ingot grown by a computer simulation (structure loss rate: S / L rate ) can predict what