Programming method of reducing set time of Phase-Change memory and writing driver circuit thereof

摘要

The programming method and a write driver circuit for implementing a programming method which minimizes the set (set) time for the phase change memory is disclosed. In the programming (programming) method for a phase change memory device comprising a phase change material programming method according to an embodiment of the present invention, which is high in response to the applied current pulses will change state as a resistance or a low resistance, wherein the phase change a current pulse and a second stage having a large current larger than the current size of the first stage (stage) of the first stage having a predetermined amount of current to make the state of the material to a low resistance state in the phase change material and a step of applying. The current size of the first stage is a current, the amount by which heat the phase change material to a nucleation temperature for the greatest chance of the state of the phase change material is in the low resistance state. The current size of the second stage is a current, the amount by which heat the phase change material to the greatest probability of crystal growth temperature to be in a state where the low-resistance state of the phase change material. The second stage is the first stage comes to the next. Programming method and a write driver circuit according to the invention has the advantage of being able to speed up the crystallization operation by allowing the phase change material during the crystallization behavior of the phase change material undergoing the nucleation step through the crystal growth step.