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DRYCLEANING TIMING DETERMINATION SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS, DRYCLEANING METHOD FOR SEMICONDUCTOR MANUFACTURING APPARATUS, DRYCLEANING SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
DRYCLEANING TIMING DETERMINATION SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS, DRYCLEANING METHOD FOR SEMICONDUCTOR MANUFACTURING APPARATUS, DRYCLEANING SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Whether to perform wafer processing for the semiconductor manufacturing apparatus whether to perform the cleaning process, the integrated processing by a computer based on various kinds of information, dry cleaning time determination system and a choice of efficient automatic determination as to the performing the one process of the for increasing the ratio, it provides an efficient dry cleaning, dry cleaning systems to prevent over-etching of detecting a cleaning end point. It is deposited in the interior of the reaction vessel 5 of the semiconductor manufacturing apparatus to deposit a film at least on dry-cleaning for removing etched by the cleaning gas containing a halogen gas. The first invention is a system that the device is immediately if I can be subjected to processing such as film formation process, or the automatic determination whether to immediately subjected to the cleaning with respect to the predetermined semiconductor manufacturing device. The second invention is thereby present a metal, metal compound, organic-based gas such as when removed by a cleaning gas containing a halogen gas, such as at least ClF 3 gas is deposited film deposited in the reaction vessel of a semiconductor manufacturing apparatus for forming such as CVD film . Increasing the selectivity, it is possible to increase the cleaning time. The third invention is a system that performs control for carrying out an effective cleaning of the apparatus.
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