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Method static decay apparatus and a static decay of plasma etching equipment

机译:方法静态衰减装置和等离子体蚀刻装置的静态衰减

摘要

When the through-hole at least one having a predetermined diameter in the center is formed to be charged etching the object of the plasma etching process, lift discloses a lower electrode of the plasma etching equipment is a predetermined gas through-out alone, for the lower electrode and the lower electrode connected to the through-holes with each pipe and discloses apparatus for static decay of plasma etching equipment having a gas supplier to control the amount and the etching object is supplied through a predetermined gas alone when the lifting charge from the plasma etching process.; Thus, it is possible to safely lift a glass unloading to loading, exit the plasma etching, it is possible to secure the safety of the glass, there is an effect that the yield is thus improved, thereby improving the processing environment.
机译:当形成至少一个在中心具有预定直径的通孔以进行带电蚀刻以进行等离子体蚀刻处理的目的时,提要公开了等离子体蚀刻设备的下部电极仅是预定的气体穿通孔,用于下部电极和下部电极通过每条管道连接到通孔,并公开了一种用于等离子体蚀刻设备的静态衰减的设备,该设备具有气体供给器以控制量,并且当来自容器的提升电荷通过单独的预定气体供给蚀刻对象时。等离子蚀刻工艺。因此,可以安全地将玻璃卸载以加载,退出等离子蚀刻,可以确保玻璃的安全性,从而具有提高产量的效果,从而改善了加工环境。

著录项

  • 公开/公告号KR100510920B1

    专利类型

  • 公开/公告日2005-08-20

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR19980013843

  • 发明设计人 SHIN HUI SEONG;CHOI JONG HUN;

    申请日1998-04-17

  • 分类号H01L21/306;

  • 国家 KR

  • 入库时间 2022-08-21 22:03:28

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