TYPE DFB laser structure with the conclusions of radiation through the surface for wideband data transmission systems and sets of such lasers

摘要

1. semiconductor laser with the u0438u0437u043bu0443u0447u0435u043du0438u00a0 across the surface, containing:;structure of semiconductor laser comprising an active layer located on opposite sides of the layers adjacent to the active layer, u043fu043eu0434u043bu043eu0436u043a i, the u043fu043eu043au0430u0437u0430u0442u0435u043bu00a0 u043fu0440u0435u043bu043eu043cu043bu0435u043du0438u00a0 designed u0434u043bu00a0 u043eu0433u0440u0430u043du0438u0447u0435u043du0438u00a0 in the transverse direction of the optical industry, and electrodes, which can u0438u043du0436u0435u043au0442 ing current to the semiconductor laser structure.;the second diffraction grating or higher u043fu043eu0440u00a0u0434u043au0430, distributed so that it contains the periodic lattice u0447u0435u0440u0435u0434u0443u044eu0449u0438u0435u0441u00a0 elements, with each of the u0430u043du043du044bu0445 element lattice u043eu0442u043bu0438u0447u0430u0435u0442u0441u00a0 because he u043fu0440u0435u0434u0441u0442u0430u0432u043bu00a0u0435u0442 an element by element with high or low rise, which in u0438u043du0436u0435u043au0442u0438u0440u043eu0432u0430u043du0438u0438 then this element with low rise low rise u043fu0440u043eu00a0u0432u043bu00a0u0435u0442,the lack of u0443u0441u0438u043bu0435u043du0438u00a0 or absorption, compared with the element with the highest increase, each of these elements has a certain length, and the length of the el ment with high reinforcement and length of growing period in low u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 lattice and the lattice period u043du0430u0445u043eu0434u0438u0442u0441u00a0 in rangethe u0434u043bu00a0 u043fu043eu043bu0443u0447u0435u043du0438u00a0 optical signal in the range of the signal optical transmission systems, in which the length of one of the elements with high growing sta u0430u0432u043bu00a0u0435u0442 not more than 0.5 long period lattice.;2. semiconductor laser for 1, in which the length of the specified elements of high u0443u0441u0438u043bu0435u043du0438u00a0 u0441u043eu0441u0442u0430u0432u043bu00a0u0435u0442 from 15% to 35% of the length of the period lattice.;3. semiconductor laser for 1, in which the length of one of the elements with high reinforcement u0441u043eu0441u0442u0430u0432u043bu00a0u0435u0442 approximately 25% of the length of the period lattice.;4. semiconductor laser for 1, in which u0434u0438u0444u0440u0430u043au0446u0438u043eu043du043du0430u00a0 lattice with the distribution of u00a0u0432u043bu00a0u0435u0442u0441u00a0 optically active and formed in the environment u0443u0441u0438u043bu0435u043du0438u00a0, actively m layer.;5. semiconductor laser for 1, in which u0443u043au0430u0437u0430u043du043du0430u00a0 u0440u0430u0441u043fu0440u0435u0434u0435u043bu0435u043du043du0430u00a0 u0434u0438u0444u0440u0430u043au0446u0438u043eu043du043du0430u00a0 lattice u00a0u0432u043bu00a0u0435u0442u0441u00a0 optically active and formed in the environment of losses of fashion.;6. semiconductor laser for 1, in which u0443u043au0430u0437u0430u043du043du0430u00a0 u0440u0430u0441u043fu0440u0435u0434u0435u043bu0435u043du043du0430u00a0 u0434u0438u0444u0440u0430u043au0446u0438u043eu043du043du0430u00a0 lattice not u00a0u0432u043bu00a0u0435u0442u0441u00a0 optically active and formed of a material u0431u043bu043eu043au0438u0440u0443u044eu0449u0435u0433 on the current.;7. semiconductor laser for 1, which contains an integer number of periods u0443u043au0430u0437u0430u043du043du0430u00a0 grate bars.;8. semiconductor laser for 1, in which u0443u043au0430u0437u0430u043du043du0430u00a0 structure further includes an area u043au043eu0442u043eu0440u0430u00a0 at least partially surrounds the re u0448u0435u0442u043au0443 in the plane of the grating.;9. semiconductor laser for 1, in which u0443u043au0430u0437u0430u043du043du0430u00a0 u043fu0440u0438u043bu0435u0433u0430u044eu0449u0430u00a0 area further includes integrated formed area u043fu043eu0433u043bu043eu0449u0435u043du0438u00a0 located with ka u0436u0434u043eu0433u043e log gets rid of the distributed u0434u0438u0444u0440u0430u043au0446u0438u043eu043du043du043eu0439 lattice.;10. semiconductor laser for 1, further comprising an area containing the u0444u043eu0442u043eu0434u0435u0442u0435u043au0442u043eu0440.;11. semiconductor laser on p.10, in which the u0444u043eu0442u043eu0434u0435u0442u0435u043au0442u043eu0440 integrated structure formed with the laser.;12. semiconductor laser on p.11, further includes a feedback loop u0441u0432u00a0u0437u0438 connected to the u0444u043eu0442u043eu0434u0435u0442u0435u043au0442u043eu0440u0443 designed u0434u043bu00a0 u0441u0440u0430u0432u043du0435u043du0438u00a0 u0434u0435u0442u0435u043au0442u0438u0440u0443 u0435u043cu043eu0433u043e output signal, with the output signal.;13. semiconductor laser on p.12, further comprising u0440u0435u0433u0443u043bu00a0u0442u043eu0440 designed u0434u043bu00a0 u0440u0435u0433u0443u043bu0438u0440u043eu0432u0430u043du0438u00a0 input current, the output u0441u0438u0433u043du0430 u0434u043bu00a0 u043fu043eu0434u0434u0435u0440u0436u0430u043du0438u00a0 la on the significance of the characteristics.;14. semiconductor laser on p.8, which u0443u043au0430u0437u0430u043du043du0430u00a0 u043fu0440u0438u043bu0435u0433u0430u044eu0449u0430u00a0 area formed of a material with a resistance, a sufficient u0434u043bu00a0 electric u0438u0437u043eu043bu00a0u0446u0438 and the lattice using the laser.;15. the laser with the u0438u0437u043bu0443u0447u0435u043du0438u00a0 through surface at 1 in which one of the electrodes contains a u0434u043bu00a0 u0438u0437u043bu0443u0447u0435u043du0438u00a0 signal.;16. the laser with the u0438u0437u043bu0443u0447u0435u043du0438u00a0 through the surface 1, which u0443u043au0430u0437u0430u043du043du0430u00a0 structure u043fu043eu043au0430u0437u0430u0442u0435u043bu00a0 u043fu0440u0435u043bu043eu043cu043bu0435u043du0438u00a0, u043eu0431u0435u0441u043fu0435u0447u0438u0432u0430u044eu0449u0430u00a0 lateral restriction, u043fu0440u0435u0434u0441u0442u0430u0432u043bu00a0u0435u0442 gss oh, one of the u0433u0440u0435u0431u0435u043du0447u0430u0442u043eu0433u043e u0432u043eu043bu043du043eu0432u043eu0434u0430 or u0432u043eu043bu043du043eu0432u043eu0434u0430 with latent u0433u0435u0442u0435u0440u043eu0441u0442u0440u0443u043au0442u0443u0440u043eu0439.;17. semiconductor laser on p.8, which u0443u043au0430u0437u0430u043du043du0430u00a0 structure further includes a laser structure u043eu0433u0440u0430u043du0438u0447u0435u043du0438u00a0 u043fu043eu043bu00a0 with each longitudinal ends of the re u0437u043eu043du0430u0442u043eu0440u0430 laser.;18. semiconductor laser for p.17, which u0443u043au0430u0437u0430u043du043du0430u00a0 structure u043eu0433u0440u0430u043du0438u0447u0435u043du0438u00a0 longitudinal u043fu043eu043bu00a0 contains integrated grating formed by first u043fu043eu0440u00a0u0434u043au0430 and specified the laser further includes a second flat electrode u0441u0432u00a0u0437u0430u043du043du044bu0439 the bars in her first u043fu043eu0440u00a0u0434u043au0430 u0434u043bu00a0 injecting current.;19. a set of semiconductor lasers with the u0438u0437u043bu0443u0447u0435u043du0438u00a0 across the surface as u0437u0430u00a0u0432u043bu0435u043du043e 1, wherein the kit comprises two or more of the l u0430u0437u0435u0440u043eu0432 located on the common product.;20. a set of semiconductor lasers on p.19, in which each of the two or more of these lasers is the output signal with a different dl ina wavelength and output power, and which can be individually u043fu0440u043eu043cu043eu0434u0443u043bu0438u0440u043eu0432u0430u043d.;21. a set of semiconductor lasers on p.19, in which each of the two or more lasers generates the output signal with u043eu0434u0438u043du0430u043au043eu0432u0443 yu long waves.;22. method of production of semiconductor lasers with the u0438u0437u043bu0443u0447u0435u043du0438u00a0 through surface, comprising the following steps:;the formation of many structures of semiconductor laser by coherent u0444u043eu0440u043cu0438u0440u043eu0432u0430u043du0438u00a0 layers on a flat product.;the formation of the flat u0441u043bu043eu00a0 shell has first and second active u0441u043bu043eu00a0 u0441u043bu043eu00a0 shell;;the formation of the flat turret has multiple distributed bars, second or higher u043fu043eu0440u00a0u0434u043au0430, u0441u0432u00a0u0437u0430u043du043du044bu0445 the active. oem;;the formation of the electrodes on each of the structures of semiconductor laser located on the flat product, u0434u043bu00a0 u0438u043du0436u0435u043au0442u0438u0440u043eu0432u0430u043du0438u00a0 current in every yu of the bars, where one of the electrodes has a hole u0434u043bu00a0 u043eu0431u0435u0441u043fu0435u0447u0435u043du0438u00a0 emitted light; and;verification of each of these structures of semiconductor laser by u0438u043du0436u0435u043au0442u0438u0440u043eu0432u0430u043du0438u00a0 test current in the structure, the structure is still u0432u0440u0435u043cu00a0 u043eu0435u0434u0438u043du0435u043du044b with the common flat substrate.;23. method for the simultaneous u0444u043eu0440u043cu0438u0440u043eu0432u0430u043du0438u00a0 p.22, additionally containing a phase adjacent areas between the multiple distributed turret lattices.;24. method for u0444u043eu0440u043cu0438u0440u043eu0432u0430u043du0438u00a0 p.22, further containing a phase structure of the u043fu0440u0435u043bu043eu043cu043bu0435u043du0438u00a0 designed u0434u043bu00a0 u043eu0433u0440u0430u043du0438u0447u0435u043du0438u00a0 in transverse direction u043eu043fu0442u0438u0447u0435u0441 the fashion for each of the structures of semiconductor laser in the form of u0433u0440u0435u0431u0435u043du0447u0430u0442u043eu0433u043e u0432u043eu043bu043du043eu0432u043eu0434u0430 or u0432u043eu043bu043du043eu0432u043eu0434u0430 based on hidden u0433u0435u0442u0435u0440u043eu0441u0442u0440u0443u043au0442u0443u0440u044b.;25. method for u0444u043eu0440u043cu0438u0440u043eu0432u0430u043du0438u00a0 p.22, further containing a phase of both the log gets rid of each of the bars of u043fu043eu0433u043bu043eu0449u0435u043du0438u00a0 in the adjacent area.;26. method for u0440u0430u0441u0449u0435u043fu043bu0435u043du0438u00a0 p.22, further containing phase of the substrate along the adjacent areas, u0434u043bu00a0 u0444u043eu0440u043cu0438u0440u043eu0432u0430u043du0438u00a0 of lasers.;27. semiconductor laser with the u0438u0437u043bu0443u0447u0435u043du0438u00a0 across the surface, containing:;structure of semiconductor laser comprising an active layer located on opposite sides of the layers adjacent to the active layer, u043fu043eu0434u043bu043eu0436u043a i, the u043fu043eu043au0430u0437u0430u0442u0435u043bu00a0 u043fu0440u0435u043bu043eu043cu043bu0435u043du0438u00a0 designed u0434u043bu00a0 u043eu0433u0440u0430u043du0438u0447u0435u043du0438u00a0 in the transverse direction of the optical industry, and electrodes, which can u0438u043du0436u0435u043au0442 ing current to the semiconductor laser structure.;diffraction grating with a given distribution of second or higher u043fu043eu0440u00a0u0434u043au0430, u0441u0432u00a0u0437u0430u043du043du0443u044e with active layer of the laser structure and the sl. u0440u0435u0434u0435u043bu0435u043du0438u0435 u0434u0438u0444u0440u0430u043au0446u0438u043eu043du043du043eu0439 lattice contains periodically u0447u0435u0440u0435u0434u0443u044eu0449u0438u0435u0441u00a0 elements lattice, with each of the elements of the lattice has the effect of u0443u0441u0438u043bu0435u043du0438u00a0, which u043bu044eu0431u0430u00a0 u0441u043eu0441u0435u0434u043du00a0u00a0 pair of bars includes one elementa relatively high effect u0443u0441u0438u043bu0435u043du0438u00a0 and element having a relatively low u0443u0441u0438u043bu0435u043du0438u00a0 effect, in which the difference of the effects u0443u0441u0438u043bu0435u043du0438u00a0, various kn u0430u0447u0435u043du0438u00a0 indicators u043fu0440u0435u043bu043eu043cu043bu0435u043du0438u00a0 elements of high and low u0443u0441u0438u043bu0435u043du0438u00a0 and the period lattice provides the output signal in the range close to 850 nano meters, or 910 nanometers to 990 nanometers.or from 1200 nanometers to 1700 nanometers, and wherein each of the elements of the lattice has a certain length, and the length of the element with a relatively high ef u0444u0435u043au0442u043eu043c u0443u0441u0438u043bu0435u043du0438u00a0 and length of element with relatively low effect u0443u0441u0438u043bu0435u043du0438u00a0 jointly u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 period lattice, in which the length of one of the elements on the high rise does not exceed 0.5 long period lattice.;28. semiconductor laser on p.27, which u0443u043au0430u0437u0430u043du043du0430u00a0 structure u043fu043eu043au0430u0437u0430u0442u0435u043bu00a0 u043fu0440u0435u043bu043eu043cu043bu0435u043du0438u00a0, u043eu0431u0435u0441u043fu0435u0447u0438u0432u0430u044eu0449u0430u00a0 lateral restriction, u043fu0440u0435u0434u0441u0442u0430u0432u043bu00a0u0435u0442 a u0433u0440u0435u0431u0435u043du0447u0430 ies u0432u043eu043bu043du043eu0432u043eu0434u043eu0432 or waveguide with a hidden u0433u0435u0442u0435u0440u043eu0441u0442u0440u0443u043au0442u0443u0440u043eu0439.;29. method of stabilizing the output signal of a laser, comprising the following steps:;the power supply to the laser with the u0438u0437u043bu0443u0447u0435u043du0438u00a0 through surface by u0438u043du0436u0435u043au0442u0438u0440u043eu0432u0430u043du0438u00a0 current laser;;power to the one or more connected with the laser range;;monitoring the quality of the output signal of the laser with the radiation from the surface through the u0444u043eu0442u043eu0434u0435u0442u0435u043au0442u043eu0440u0430; and;the regulation of the current, u0438u043du0436u0435u043au0442u0438u0440u0443u0435u043cu043eu0433u043e in laser u0434u043bu00a0 u043fu0440u0435u0434u043eu0442u0432u0440u0430u0449u0435u043du0438u00a0 flux signal.;30. method for p.29, further comprising a pre stage u0444u043eu0440u043cu0438u0440u043eu0432u0430u043du0438u00a0 the u0444u043eu0442u043eu0434u0435u0442u0435u043au0442u043eu0440u0430 integrated with the laser.;31. method for incorporating phase u043fu043eu0434u043au043bu044eu0447u0435u043du0438u00a0 p.30, further the u0444u043eu0442u043eu0434u0435u0442u0435u043au0442u043eu0440u0430 to loop back u0441u0432u00a0u0437u0438 and u0441u0440u0430u0432u043du0435u043du0438u00a0 the u0434u0435u0442u0435u043au0442u0438u0440u0443u0435u043cu043eu0433u043e output signal and with the required output signal.;32. a way to further includes phase u0440u0435u0433u0443u043bu00a0u0442u043eu0440u0430 p.31, installation and u0440u0435u0433u0443u043bu0438u0440u043eu0432u0430u043du0438u00a0 value current, u0438u043du0436u0435u043au0442u0438u0440u0443u0435u043cu043eu0433u043e in the laser u0434u043bu00a0 u043fu0440u0435u0434u043eu0442u0432u0440u0430u0449u0435u043du0438u00a0 fluctuations a signal in accordance with the comparison, using the feedback loop u0441u0432u00a0u0437u0438.;33. semiconductor laser with the u0438u0437u043bu0443u0447u0435u043du0438u00a0 through surface designed u0434u043bu00a0 u043fu043eu043bu0443u0447u0435u043du0438u00a0 output signals with certain spatial u0445u0430u0440u0430u043au0442u0435u0440u0438u0441u0442u0438 kami, with the laser contains:;structure of semiconductor laser comprising an active layer located on opposite sides of the layers adjacent to the active layer, u043fu043eu0434u043bu043eu0436u043a and the electrodes, which can u0438u043du0436u0435u043au0442u0438u0440u043eu0432u0430u0442u044c current to the semiconductor laser structure u0434u043bu00a0 u043fu043eu043bu0443u0447u0435u043du0438u00a0 output signal in the transmission of hell, the dunn's x diffraction grating and distributed the second or higher u043fu043eu0440u00a0u0434u043au0430,the size and form of which provide the u0438u043du0436u0435u043au0442u0438u0440u043eu0432u0430u043du0438u0438 current in the laser structure, the lower the threshold u0443u0441u0438u043bu0435u043du0438u00a0 u0434u043bu00a0 fashion with a maximum of than u043fu043eu0440u043eu0433u043e u0432u043eu0435 importance u0443u0441u0438u043bu0435u043du0438u00a0 u0434u043bu00a0 any other mods, which u0443u043au0430u0437u0430u043du043du0430u00a0 fashion with a maximum of laser u0438u0437u043bu0443u0447u0435u043du0438u00a0 facilitates docking of the output signal with fibre optic u0441u0432u0435u0442u043eu0432u043eu0434u043eu043c.;34. semiconductor laser for p.33, in which u0443u043au0430u0437u0430u043du043du0430u00a0 u0440u0430u0441u043fu0440u0435u0434u0435u043bu0435u043du043du0430u00a0 u0434u0438u0444u0440u0430u043au0446u0438u043eu043du043du0430u00a0 lattice consists of u0447u0435u0440u0435u0434u0443u044eu0449u0438u0445u0441u00a0 element lattice, which u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 period lattice, in which one of the ordinance u043du043du044bu0445 elements u043fu0440u0435u0434u0441u0442u0430u0432u043bu00a0u0435u0442 an element with a relatively high increase, and the next element u043fu0440u0435u0434u0441u0442u0430u0432u043bu00a0u0435u0442 an element with a relatively low growing, and to thor is an element with a relatively high u0441u043eu0441u0442u0430u0432u043bu00a0u0435u0442 not more than 0.5 long period lattice.;35. semiconductor laser for p.33, which u0443u043au0430u0437u0430u043du043du0430u00a0 u0440u0430u0441u043fu0440u0435u0434u0435u043bu0435u043du043du0430u00a0 u0434u0438u0444u0440u0430u043au0446u0438u043eu043du043du0430u00a0 lattice u043fu0440u0435u0434u0441u0442u0430u0432u043bu00a0u0435u0442 a jail, with u0441u0432u00a0u0437u044cu044e increased active area of uca lead structure.;36. semiconductor laser for p.33, which u0443u043au0430u0437u0430u043du043du0430u00a0 u0440u0430u0441u043fu0440u0435u0434u0435u043bu0435u043du043du0430u00a0 u0434u0438u0444u0440u0430u043au0446u0438u043eu043du043du0430u00a0 lattice u043fu0440u0435u0434u0441u0442u0430u0432u043bu00a0u0435u0442 a jail, with u0441u0432u00a0u0437u044cu044e on u043fu043eu0442u0435u0440u00a0u043c in the amount specified. floor structure.;37. semiconductor laser for p.33, which u0443u043au0430u0437u0430u043du043du0430u00a0 u0440u0430u0441u043fu0440u0435u0434u0435u043bu0435u043du043du0430u00a0 u0434u0438u0444u0440u0430u043au0446u0438u043eu043du043du0430u00a0 lattice u043fu0440u0435u0434u0441u0442u0430u0432u043bu00a0u0435u0442 bars with a blocking current in the structure p u043eu043bu0443u043fu0440u043eu0432u043eu0434u043du0438u043au043eu0432u043eu0433u043e laser.