Polysilicon line, with a metal silicide area, which makes possible a lines wide reduction

摘要

In that the gate electrode during the operating procedure for the production of metal silicide regions in the drain - and the source of a field effect transistor is held covered, can be a suitable metal silicide on the gate electrode is to be produced, the requirements for a reduction in the size of the gate length corresponds to aggressive. Preferably, a nickel silicide on the gate electrode is formed, whereas the drain - and source regions of an established cobalt disilicide the material obtained. In addition, the gate electrodes doping profile effective manner by the doping profile of the drain - and said source region decoupled.