首页> 外国专利> Production of insulating regions in semiconductor memories comprises forming a hard mask with openings in a region of a stronger electrical insulation and in a region of a weaker electrical insulation on a substrate, and further processing

Production of insulating regions in semiconductor memories comprises forming a hard mask with openings in a region of a stronger electrical insulation and in a region of a weaker electrical insulation on a substrate, and further processing

机译:半导体存储器中绝缘区域的产生包括在基板上形成具有较强电绝缘区域和较弱电绝缘区域中的开口的硬掩模,并进行进一步处理

摘要

Production of insulating regions in semiconductor memories comprises forming a hard mask (4) with openings (7) in the region of a stronger electrical insulation and in the region of a weaker electrical insulation on a substrate (1), closing the openings in the region of weaker electrical insulation using a filler (10), etching trenches in the substrate using the mask, removing the filler, etching again, removing the mask and filling the trenches with a dielectric.
机译:在半导体存储器中产生绝缘区域包括在衬底(1)上的电绝缘性较强的区域和电绝缘性较弱的区域中形成具有开口(7)的硬掩模(4),将区域中的开口封闭使用填料(10)进行较弱的电绝缘处理,使用掩模在衬底中蚀刻沟槽,去除填料,再次蚀刻,去除掩模,并用电介质填充沟槽。

著录项

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号