Method and apparatus for minimizing of microscopic and macroscopic alignment errors of a multilayer coating

摘要

A method for aligning a second layer on a first layer of a semiconductor structure, by forming a first layer of a wafer, which has a predetermined structure, via a first etching process, to which a first machine is used to generate ionized gas. Forming a second layer, which has a circuit structure, by means of a second etching process, which a second machine for producing ionized gas is used, wherein the forming of the second layer is a minimizing a relative displacement between the predetermined structure, arranged on an edge of the wafer of the first layer, and the second circuit structure is provided, which at the edge of the wafer of the second layer is arranged.