Production of a semiconductor structure used as a DRAM memory cell comprises forming a first barrier layer in a lower trench region in a trench in a substrate and filling with a first filler, and further processing

摘要

Production of a semiconductor structure comprises forming a first barrier layer (40) in a lower trench region (2') in a trench (2) in a substrate (1) and filling with a first filler (30), forming a second barrier layer (41) in an upper trench region (2'') and filling with a second filler, removing the second filler in a vertical partial trench and removing the second barrier layer in a base region (21'), changing the properties of a partial region of the first filler to form a third barrier layer (42) below the base region, growing the substrate in the vertical partial trench, removing the second filler and the second barrier layer, removing the upper partial region of the first barrier layer, forming a hole with a fourth barrier layer (43), filling the hole with a hole filler (60) to form a strip, optionally deepening the vertical partial trench by removing the first filler, forming a vertical partial trench with a fifth barrier layer (44), and filling the partial trench with a third filler (32) so that the band forms a conducting trenched contact.