lateral kurzkanal - dmos, method of producing the same and part

摘要

lateralkurzkanal - dmos, in which a semiconductor of a first leitf & auml; higkeitstypsis trained with a oberfl & auml; che of the halbleiterbereichsthe first leitf & auml; higkeitstypsw & auml; whilesperrvorspannung almost full & auml; fieldimpoverished, while the lateral kurzkanal - dmos include:on a oberfl & auml; chea halbleitersubstrats trained semiconductor of the firstleitf & auml; higkeitstyps;in a oberfl & auml; chethe halbleiterbereichs the first leitf & auml; higkeitstyps trained tuba second leitf & auml; higkeitstyps,the kanalbildenden area includes; a in the oberfl & auml; che thetub of the second leitf & auml; higkeitstypstrained source & divo; areathe first leitf & auml; higkeitstyps;in the oberfl & auml; chethe halbleiterbereichs the first leitf & auml; higkeitstyps traineddrain area of the first leitf & auml; higkeitstyps;a gate electrode, and professional; on a gate - insulatingmovie in a upper part at least of the kanalbildenden areaan area from the source area of the first leitf & auml; higkeitstypsthe drain area of the first leitf & auml; higkeitstyps is trained withthe lateral kurzkanal - dmos characterized that healso includes: one in the oberfl & auml; che of thethe first halbleiterbereichs leitf & auml; higkeitstyps trained tub...