首页> 外文OA文献 >New Experimental Findings on Hot-Carrier-Induced Degradation in Lateral DMOS Transistors

【2h】

New Experimental Findings on Hot-Carrier-Induced Degradation in Lateral DMOS Transistors

机译：横向DmOs晶体管中热载流子诱导退化的新实验研究

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
In Kyung Lee; Se Re; Na Yun; Kyo Sun Kim; Chong Gun Yu; Jong Tae Parka;
展开▼
作者单位

展开▼
年度 2014
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. 带阶梯栅氧的N-LDMOS晶体管热载流子退化分析 [J] . 刘斯扬, 钱钦松, 孙伟锋东南大学学报（英文版） . 2010,第001期
2. 带阶梯栅氧的N-LDMOS晶体管热载流子退化分析（英文） [J] . 刘斯扬, 钱钦松, 孙伟锋东南大学学报：英文版 . 2010,第001期
3. New Experimental Findings on Hot-Carrier-Induced Degradation in Lateral DMOS Transistors [J] . In Kyung Lee, Se Re Na Yun, Kyo Sun Kim, Microelectronics & Reliability . 2006,第9a11期

机译：DMOS晶体管中热载流子引起的退化的新实验结果
4. Hot-Carrier-Induced Degradations and Optimizations for Lateral DMOS Transistor With Multiple Floating Poly-Gate Field Plates [J] . Siyang Liu, Xiaofei Ren, Yunchao Fang, Electron Devices, IEEE Transactions on . 2017,第8期

机译：具有多个浮置多栅极场板的横向DMOS晶体管的热载流子退化和优化
5. Hot-Carrier-Induced On-Resistance Degradation of n-Type Lateral DMOS Transistor With Shallow Trench Isolation for High-Side Application [J] . Sun Weifeng, Zhang Chunwei, Liu Siyang, Device and Materials Reliability, IEEE Transactions on . 2015,第3期

机译：高侧应用中具有浅沟槽隔离的n型横向DMOS晶体管的热载流子导通电阻衰减
6. Hot-Carrier-Induced Reliability Concerns for Lateral DMOS Transistors with Split-STI Structures [C] . Li Lu, Ran Ye, Siyang Liu, IEEE Electron Devices Technology and Manufacturing Conference . 2021

机译：具有分裂STI结构的热载波诱导的可靠性涉及横向DMOS晶体管
7. A physically based predicted lateral DMOS transistor model and circuit simulator for intelligent power IC design. [D] . Chung, Yeonbae. 1995

机译：基于物理的预测横向DMOS晶体管模型和电路仿真器，用于智能功率IC设计。
8. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [O] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone -1

机译：作为后CMOS器件基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
9. Electrical characterization and modelling of lateral DMOS transistor: investigation of capacitances and hot-carrier impact [O] . Hefyene Nasser 2005

机译：横向DMOS晶体管的电气特性和建模：电容和热载流子影响的研究
10. Moderated Degradation Enhancement of Lateral Pnp Transistors Due to Measurement Bias [R] . Witczak, S. C. , Lacoe, R. C. , Mayer, D. C. , 1999

机译：由于测量偏差导致的横向pnp晶体管的适度降级增强

New Experimental Findings on Hot-Carrier-Induced Degradation in Lateral DMOS Transistors

著录项

引文网络

相似文献

相关主题

期刊订阅