Semiconductor device, e.g. dynamic random access memory, includes semiconductor substrate, and storage node having bottom portion and sidewall with recessed portion

摘要

A semiconductor device comprises: a semiconductor substrate; and a storage node (482) formed over the substrate, and having a bottom portion and a sidewall (SW) extending upward from a rim of the bottom portion. A portion of the sidewall is recessed. An independent claim is also included for a method of fabricating a semiconductor device comprising: (A) forming a molding layer over a semiconductor substrate; (B) forming a storage contact hole penetrating the molding layer; (C) forming a storage node and a sacrificial layer pattern sequentially stacked in the storage contact hole, the top surface of the storage node being exposed between the molding layer and the sacrificial layer pattern; (D) forming a photoresist layer on the semiconductor substrate having the sacrificial layer pattern and the molding layer, the photoresist layer having a storage opening; and (E) performing an etch process on the storage node to partially remove the storage node through the storage opening, using the photoresist layer as an etch mask, the storage opening exposing the top surface of the storage node.