Semiconductor memory device amplifies data of global data line pairs and outputs to other global data line pairs during writing operation

摘要

A global data line pre-charge circuit (18') connected between a global data line pairs (1G,1GB), precharges the global data line pairs in response to the pre-charge control signal. A switching gate (30) is connected between the global data line pairs and a global data line pairs (2G,2GB). The data of the lines (2G,2GB), is amplified and output to the lines (1G,1GB) during writing operation. An independent claim is also included for data read/write method.