DATA OUTPUT CIRCUITS OF SEMICONDUCTOR MEMORY DEVICE FOR USING GLOBAL INPUT AND OUTPUT LINES SELECTIVELY ACCORDING TO SELECTED OUTPUT DATA WIDTH AND THE OPERATION METHOD OF THE SAME

摘要

A data output circuit of a semiconductor memory device using global input/output lines selectively according to selected output data width and a data output operation method thereof are provided to reduce the generation rate of read operation fail by selectively using a part or all of the global input and output lines during a read operation according to the selected output data width. An input/output sense amplifier part(SA1~SAM) senses and amplifies a part or all of read data received from a memory bank through local input and output lines in response to a data width selection signal, and outputs the amplified data to a part or all of global input and output lines. A pipe line latch part(110) latches the amplified data received through the global input and output lines, in response to latch control signals. An output driver circuit part(120) outputs output data, in response to the latch data. The number of output data is changed according to the output data width selected by the data width selection signal.