Fabrication of a stressed layer of silicon or silicon-germanium alloy on a layer of material with a modifiable mesh parameter, notably for the fabrication of transistors in integrated circuits

摘要

Fabrication of a stressed layer of silicon or silicon-germanium alloy comprises: (a) formation of a layer (2) of silicon or silicon-germanium alloy on a layer (1) of a material having a modifiable mesh parameter; and (b) modification of the mesh parameter.