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Anodic bonding of semiconductor wafers using intermediate layer containing alkali, for production of micro-electro-mechanical structures
Anodic bonding of semiconductor wafers using intermediate layer containing alkali, for production of micro-electro-mechanical structures
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机译:使用含碱的中间层对半导体晶圆进行阳极键合,以生产微机电结构
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摘要
The bonding of wafers uses an intermediate layer (2) between the first wafer (6) and the second wafer. The two wafers are linked in an anodic manner. An independent claim is also included for a device formed from two wafers connected in an anodic manner.
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