IMPROVED METHOD OF FORMING BOTTOM-GATE THIN-FILM TRANSISTOR BY USING BLENDED SOLUTION TO FORM SEMICONDUCTOR LAYER AND INSULATING LAYER

摘要

PROBLEM TO BE SOLVED: To form a polymer layer and seal the layer in an electronic device.;SOLUTION: In a method of forming a semiconductive polymer layer protected by an insulating polymer layer, materials for forming a semiconductive polymer and an insulating polymer are dissolved in a solvent. When a blended solution is deposited on a substrate, the semiconductive polymer and the insulating polymer are separated. When the solvent is vaporized, a semiconductive material forms an active area of a TFT and the insulating polymer minimizes the exposure of the semiconductive polymer to the air.;COPYRIGHT: (C)2006,JPO&NCIPI