首页> 外国专利> ORGANIC LIGHT-EMITTING DISPLAY WITH SINGLE CRYSTALLINE SILICON THIN-FILM TRANSISTOR, AND METHOD OF FABRICATING THE SAME

ORGANIC LIGHT-EMITTING DISPLAY WITH SINGLE CRYSTALLINE SILICON THIN-FILM TRANSISTOR, AND METHOD OF FABRICATING THE SAME

机译:具有单晶硅薄膜晶体管的有机发光显示器及其制造方法

摘要

PPROBLEM TO BE SOLVED: To provide an organic light-emitting display of a single crystalline silicon thin-film transistor, and to provide a method of fabricating the same. PSOLUTION: The organic light-emitting display is provided, where a semiconductor circuit unit of 2T-1C structure, including a switching transistor and a drive transistor formed of single crystalline silicon is formed on a plastic substrate. The method of manufacturing the single-crystal silicon includes forming a single crystalline silicon layer and a buffer layer on a crystal grown plate, and then forming a partition layer at a predetermined depth in the single-crystal silicon layer, by implanting hydrogen ions from an upper portion of an insulating layer. The single-crystal silicon layer is stuck to the substrate. The partition layer is divided by heat energy applied to the outside. Consequently, the single-crystal silicon film can be formed on the substrate into a designated thickness. PCOPYRIGHT: (C)2007,JPO&INPIT
机译:

要解决的问题:提供单晶硅薄膜晶体管的有机发光显示器,并提供其制造方法。

解决方案:提供有机发光显示器,其中在塑料基板上形成2T-1C结构的半导体电路单元,该半导体电路单元包括由单晶硅形成的开关晶体管和驱动晶体管。制造单晶硅的方法包括:在晶体生长板上形成单晶硅层和缓冲层;然后,通过从单晶硅层中注入氢离子,在单晶硅层中以预定深度形成分隔层。绝缘层的上部。单晶硅层粘附到基板上。分隔层被施加到外部的热能分开。因此,可以在基板上将单晶硅膜形成为指定的厚度。

版权:(C)2007,日本特许厅&INPIT

著录项

  • 公开/公告号JP2006301629A

    专利类型

  • 公开/公告日2006-11-02

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO LTD;

    申请/专利号JP20060111209

  • 发明设计人 NOGUCHI TAKASHI;XIANYU WENXU;YIN HUAXIANG;

    申请日2006-04-13

  • 分类号G09F9/30;H01L21/336;H01L29/786;H01L27/32;H05B33/02;H05B33/10;H01L51/50;H01L27/12;H01L21/02;

  • 国家 JP

  • 入库时间 2022-08-21 21:55:44

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