ZnO:Al TARGET, THIN FILM THEREOF, AND METHOD FOR MANUFACTURING THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a ZAO thin film superior in moisture resistance; a sputtering target to be used for forming the thin film; and a method for forming the ZAO film.;SOLUTION: This thin film is a transparent electroconductive film which includes zinc, aluminum and oxygen, and contains crystal faces (0002) of ZnO determined by XRD in such an amount as the half-width of the Rocking Curve being 5 degrees or less. The sputtering target is a sintered compact including, for instance, zinc, aluminum and oxygen, wherein the aluminum content is 2.3 to 3.5 wt.% in terms of oxide. The method for forming the thin film comprises: using the above target; setting a substrate at 180°C or higher; evacuating the inside of a sputtering apparatus into a pressure lower than 1×10^-4 Pa; and forming the film by a dc magnetron sputtering method.;COPYRIGHT: (C)2006,JPO&NCIPI