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DELAY CALCULATION METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT AND CELL CHARACTERIZATION METHOD

机译:半导体集成电路的延迟计算方法和细胞表征方法

摘要

PPROBLEM TO BE SOLVED: To solve the following problems of gate level delay calculation: input terminal capacity has drive load capacity and input through dependence, but the dependence thereof is not considered in delay calculation of a present situation, and the input terminal capacity is extracted more largely than apparent input terminal capacity. PSOLUTION: The input terminal capacity of a cell is previously found by a function expression, and the input terminal capacity is found in the delay calculation while calculating the input terminal capacity as a function of the drive load capacity and input through in each instance. In cell characterization, by finding a total of current flowing in an input terminal for a time until a voltage value of the input terminal arrives at a reference voltage, a value close to the actual apparent input terminal capacity can be found. PCOPYRIGHT: (C)2006,JPO&NCIPI
机译:

要解决的问题:解决门电平延迟计算的以下问题:输入端子容量具有驱动负载能力和输入依赖关系,但在当前情况的延迟计算中不考虑其依赖关系,而输入端子容量比视在输入端子容量更大。

解决方案:先前已通过函数表达式找到了单元的输入端子容量,并且在计算输入端子容量作为驱动负载容量的函数并在每个端子中输入时,在延迟计算中找到了输入端子容量。实例。在电池表征中,通过找到直到输入端子的电压值达到参考电压为止的时间流过输入端子的总电流,可以找到接近实际视在输入端子容量的值。

版权:(C)2006,JPO&NCIPI

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