METHOD OF FORMING RUTHENIUM FILM AND TUNNEL MAGNETORESISTANCE EFFECT MULTILAYER FILM

摘要

PROBLEM TO BE SOLVED: To provide a method of forming an Ru film which can perform precise film thickness control and a tunnel magnetoresistance effect multilayer film.;SOLUTION: The method of forming the Ru film includes a step of giving a predetermined bias potential to a substrate 20 when a non-magnetic Ru film interposed between a pair of ferromagnetic films is formed by a sputtering method, in the case that the tunnel magnetoresistance effect layer is formed on the substrate 20. In this case, in the case of sputtering, a predetermined high frequency power is applied to the substrate 20, and it can be controlled so that the potential of the substrate 20 is set to -20 to -100 V.;COPYRIGHT: (C)2006,JPO&NCIPI