SOLUTION RAW MATERIAL FOR ORGANO-METALLIC CHEMICAL VAPOR DEPOSITION PROCESS AND METHOD FOR PRODUCING MULTIPLE OXIDE BASED DIELECTRIC THIN FILM USING THE RAW MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a solution raw material for an organo-metallic chemical vapor deposition process having excellent compositional controllability and step coverage in an film, and to provide a multiple oxide based dielectric thin film produced using the raw material.;SOLUTION: The invention is the improvement of a solution raw material for an organo-metallic chemical vapor deposition process where one or more kinds of organo-metallic compounds are dissolved in an organic solvent. In its constitution, the organic solvent is a five-membered hetero ring compound expressed by C₅H₉-R, or the organic solvent is a mixed solvent obtained by mixing a first solvent composed of C₅H₉-R with one or more kinds of second solvents selected from the group consisting of alcohol, alkane, ester, aromatic groups, alkyl ether and ketone; wherein, R denotes hydrogen or a 1 to 2C alkyl group.;COPYRIGHT: (C)2006,JPO&NCIPI